Nagarajan Raghavan

Assistant Professor

Email: antnenwna@fhgq.rqh.ft
Website: http://people.sutd.edu.sg/~nagarajan/
Telephone: +65 6499 8756
Research Areas:
Material Science,Electronics Engineering,Infocomm Applications

Pillar / Cluster: Engineering Product Development

Biography

Nagarajan Raghavan obtained his Ph.D. (Microelectronics, 2012) at the Division of Microelectronics, Nanyang Technological University (NTU), Singapore and S.M. (Advanced Materials for Micro & Nano Systems, 2008) and M.Eng (Materials Science and Engineering, 2008) from National University of Singapore (NUS) and Massachusetts Institute of Technology (MIT), Boston respectively. He was a post-doctoral fellow at the Interuniversity Microelectronics Center (IMEC) in joint association with the Katholieke Universiteit Leuven (KUL) in Belgium from 2012-2013, following which he joined the SUTD-MIT Joint Postdoctoral Fellowship program for two years. His work focuses on reliability modeling of nanodevices, physics of failure modeling, maintenance engineering, design for reliability and prognostics and system health management. He is the Asia-Pacific recipient for the IEEE Electron Device Society (EDS) PhD Student Fellowship Award in 2011 and the IEEE Reliability Society Graduate Scholarship Award in 2008. To date, he has authored / co-authored close to 100 international peer-reviewed publications and four invited book chapters. He holds a US patent as a co-inventor for using CMOS platform to fabricate RRAM devices. He has served on the review committee for various IEEE journals and conferences including IRPS, IPFA and ESREF. He is currently a Member of IEEE (2005-present) and was an invited member of the IEEE GOLD committee (2012-2014).

Education

  • PhD. (Nanyang Technological University)
  • Post-Doctoral Fellow – Katholieke Universiteit Leuven (KUL), Belgium – 2012-2013
  • Post-Doctoral Fellow – SUTD / MIT – 2013-2015

Research Interests

Reliability-based design, Prognostics and health management of engineering products and systems. Magnetic spin based memory (STTRAM) reliability, Bayesian inference for nano-manufacturing, Reliability and Quality Control for 3D Printing.

Key Publications

  • Raghavan and D.D. Frey, “Particle Filter Approach to Lifetime Prediction for Microelectronic Devices and Systems with Multiple Failure Mechanisms”, Microelectronics Reliability, Accepted, In Press, (2015).
  • Raghavan, D.D. Frey, M. Bosman and K.L. Pey, “Statistics of Retention Failure in the Low Resistance State for Hafnium Oxide RRAM using a Kinetic Monte Carlo Approach”, Microelectronics Reliability, Accepted, In Press, (2015).
  • Raghavan, M. Bosman and K.L. Pey, “Probabilistic Insight to Possibility of New Metal Filament Nucleation during Repeated Cycling of Conducting Bridge Memory”, Microelectronics Reliability, Accepted, In Press, (2015).
  • Raghavan and D.D. Frey, “Remaining useful life estimation for systems subject to multiple degradation mechanisms”, IEEE Prognostics and System Health Management Conference (PHM), pp. 1-7, Austin, Texas, (2015).
  • Raghavan, D.D. Frey, M. Bosman and K.L. Pey, “Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM”, 53rd IEEE International Reliability Physics Symposium (IRPS), Monterey, California, 5B.2.1-5B.2.9, (2015).
  • Raghavan, M. Bosman and K.L. Pey, “Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer”, 53rd IEEE International Reliability Physics Symposium (IRPS), Monterey, California, 5A.2.1-5A.2.7, (2015).
  • Raghavan, D.D. Frey and K.L. Pey, “Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory”, 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 54, Issues 9-10, pp.1729-1734, (2014).
  • Raghavan, M. Bosman, D.D. Frey and K.L. Pey, “Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices”, 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 54, Issues 9-10, pp. 2266-2271, (2014).
  • Raghavan, M. Bosman and K.L. Pey, “Assessment of read disturb immunity in conducting bridge memory devices – A thermodynamic perspective”, 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)Microelectronics Reliability, Vol. 54, Issues 9-10, pp. 2295-2299, (2014).
  • Raghavan, “Performance and reliability trade-offs for high-κ RRAM”, 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Invited Paper, Microelectronics Reliability, Vol. 54, Issues 9-10, pp. 2253-2257, (2014).
  • Raghavan, K.L. Pey, D.D. Frey and M. Bosman, “Impact of ionic drift and vacancy defect passivation on TDDB statistics and lifetime enhancement of metal gate high-κ stacks”, 52nd IEEE International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, 5B.4.1-5B.4.7, (2014).
  • Raghavan, K.L. Pey, D.D. Frey and M. Bosman, “Stochastic failure model for endurance degradation in vacancy modulated HfOx RRAM using the percolation cell framework”, 52nd IEEE International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, MY.9.1-MY.9.7, (2014).
  • Raghavan, K.L. Pey and K. Shubhakar, “High-κ dielectric breakdown in nanoscale logic devices – Scientific insight and technology impact”, Microelectronics Reliability, Introductory Invited Paper (Review), Vol. 54, Issue 5, pp.847-860, (2014).
  • Raghavan, R. Degraeve, A. Fantini, L. Goux, D.J. Wouters, G. Groeseneken and M. Jurczak, “Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability”, IEEE International Electron Device Symposium (IEDM), Washington, USA, pp. 21.1.1-21.1.4, (2013).
  • Raghavan, A. Padovani, X. Li, X. Wu, V.L. Lo, M. Bosman, L. Larcher and K.L. Pey, “Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress”, Journal of Applied Physics, Vol. 114, 094504, (2013).
  • Raghavan, X. Wu, M. Bosman and K.L. Pey, “Feasibility of SILC recovery in sub-10Ǻ EOT advanced metal gate – high-κ stacks”, IEEE Electron Device Letters, Vol. 34, No. 8, pp.1053-1055, (2013).

Patents Granted

  • H. Liu, C.M. Ng, K.L. Pey and N. Raghavan – “Fabrication of RRAM Cell using CMOS Compatible Processes”, US20120241710 A1 – Global Foundries + NTU – Filed: Mar 2011, Granted: Sept 2012. (http://www.google.com/patents/US20120241710)

Awards

  • Best Student Paper Award at INFOS 2013, Krakow, Poland.
  • IEEE Electron Device Society PhD Fellowship Award (2011) – US$5000. This award is given to 3 doctoral students world over each year. Only Asia-Pacific recipient of this award.
  • UNSW, Australia Science Fellowship Writing Scheme Award (DECRA) (2011).
  • IEEE Reliability Society Graduate Scholarship Award (2008) – US$2000. This award is given to 5 budding reliability researchers world over each year.
  • NTU President’s Research Scholar Award 2004-05, 2005-06. Nanyang Scholarship Award 2003-07.